WNSC6D04650Q

WeEn Semiconductors Co., Ltd

DIODE SIL CARB 650V 4A TO220AC

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WeEn Semiconductors Co., Ltd

DIODE SIL CARB 650V 4A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	WNSC6D04650Q

Capacitance @ Vr, F	233 pF
Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	30 µA
Mounting Type	Through Hole
Operating Temperature - Junction	175 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220AC
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.4 V

Part	Supplier Device Package	Speed	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Package / Case	Current - Average Rectified (Io)	Capacitance @ Vr, F	Operating Temperature - Junction	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Diode Configuration	Current - Average Rectified (Io) (per Diode)
WeEn Semiconductors Co., Ltd WNSC6D16650B6J	D2PAK	No Recovery Time	1.45 V	80 µA	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	16 A	780 pF	175 °C	Surface Mount	650 V	SiC (Silicon Carbide) Schottky
WeEn Semiconductors Co., Ltd WNSC6D166506Q	TO-220AC	No Recovery Time	1.45 V	80 µA	TO-220-2	16 A	780 pF	175 °C	Through Hole	650 V	SiC (Silicon Carbide) Schottky
WeEn Semiconductors Co., Ltd WNSC6D20650CW6Q	TO-247-3	No Recovery Time	1.45 V	50 µA	TO-247-3			175 °C	Through Hole	650 V	SiC (Silicon Carbide) Schottky	1 Pair Common Cathode	20 A
WeEn Semiconductors Co., Ltd WNSC6D04650Q	TO-220AC	No Recovery Time	1.4 V	30 µA	TO-220-2	4 A	233 pF	175 °C	Through Hole	650 V	SiC (Silicon Carbide) Schottky

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	3000	$ 0.75

General part information

Diode 650 V 4A Through Hole TO-220AC

Technical documentation and resources

No documents available