DIODE SIL CARBIDE 650V 16A D2PAK
| Part | Supplier Device Package | Reverse Recovery Time (trr) | Speed | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Package / Case | Current - Average Rectified (Io) | Capacitance @ Vr, F | Operating Temperature - Junction | Mounting Type | Voltage - DC Reverse (Vr) (Max) [Max] | Technology | Diode Configuration | Current - Average Rectified (Io) (per Diode) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
WeEn Semiconductors Co., Ltd | D2PAK | 0 ns | No Recovery Time | 1.45 V | 80 µA | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 16 A | 780 pF | 175 °C | Surface Mount | 650 V | SiC (Silicon Carbide) Schottky | ||
WeEn Semiconductors Co., Ltd | TO-220AC | 0 ns | No Recovery Time | 1.45 V | 80 µA | TO-220-2 | 16 A | 780 pF | 175 °C | Through Hole | 650 V | SiC (Silicon Carbide) Schottky | ||
WeEn Semiconductors Co., Ltd | TO-247-3 | 0 ns | No Recovery Time | 1.45 V | 50 µA | TO-247-3 | 175 °C | Through Hole | 650 V | SiC (Silicon Carbide) Schottky | 1 Pair Common Cathode | 20 A | ||
WeEn Semiconductors Co., Ltd | TO-220AC | 0 ns | No Recovery Time | 1.4 V | 30 µA | TO-220-2 | 4 A | 233 pF | 175 °C | Through Hole | 650 V | SiC (Silicon Carbide) Schottky |