S320M

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GeneSiC Semiconductor

DO-205AB(DO-9) DIODES - GENERAL PURPOSE ROHS

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GeneSiC Semiconductor

DO-205AB(DO-9) DIODES - GENERAL PURPOSE ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	S320M

Current - Average Rectified (Io)	320 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	180 °C
Operating Temperature - Junction [Min]	-60 °C
Package / Case	DO-205AB, DO-9, Stud
Speed	Standard Recovery >500ns
Speed	200 mA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.2 V

Part	Technology	Package / Case	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Speed	Speed
GeneSiC Semiconductor S320J	Standard	DO-205AB DO-9 Stud	1.2 V	600 V	180 °C	-60 °C	Chassis Stud Mount	320 A	10 µA	Standard Recovery >500ns	200 mA
GeneSiC Semiconductor S320KR	Reverse Polarity Standard	DO-205AB DO-9 Stud	1.2 V	800 V	180 °C	-60 °C	Chassis Stud Mount	320 A	10 µA	Standard Recovery >500ns	200 mA
GeneSiC Semiconductor S320K	Standard	DO-205AB DO-9 Stud	1.2 V	800 V	180 °C	-60 °C	Chassis Stud Mount	320 A	10 µA	Standard Recovery >500ns	200 mA
GeneSiC Semiconductor S320QR	Reverse Polarity Standard	DO-205AB DO-9 Stud	1.2 V	1.2 kV	180 °C	-60 °C	Chassis Stud Mount	320 A	10 µA	Standard Recovery >500ns	200 mA
GeneSiC Semiconductor S320M	Standard	DO-205AB DO-9 Stud	1.2 V	1000 V	180 °C	-60 °C	Chassis Stud Mount	320 A	10 µA	Standard Recovery >500ns	200 mA

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General part information

Diode 1000 V 320A Chassis, Stud Mount DO-205AB (DO-9)

Technical documentation and resources