S320J
ActiveGeneSiC Semiconductor
DIODE GP 600V 320A DO205AB DO9
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S320J
ActiveGeneSiC Semiconductor
DIODE GP 600V 320A DO205AB DO9
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | S320J |
|---|---|
| Current - Average Rectified (Io) | 320 A |
| Current - Reverse Leakage @ Vr | 10 µA |
| Mounting Type | Chassis, Stud Mount |
| Operating Temperature - Junction [Max] | 180 °C |
| Operating Temperature - Junction [Min] | -60 °C |
| Package / Case | DO-205AB, DO-9, Stud |
| Speed | Standard Recovery >500ns |
| Speed | 200 mA |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 80 | $ 53.25 | |
Description
General part information
S320 Series
Diode 600 V 320A Chassis, Stud Mount DO-205AB (DO-9)
Documents
Technical documentation and resources