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S320KR

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GeneSiC Semiconductor

DIODE GP REV 800V 320A DO205AB

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S320KR

Active
GeneSiC Semiconductor

DIODE GP REV 800V 320A DO205AB

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationS320KR
Current - Average Rectified (Io)320 A
Current - Reverse Leakage @ Vr10 µA
Mounting TypeChassis, Stud Mount
Operating Temperature - Junction [Max]180 °C
Operating Temperature - Junction [Min]-60 °C
Package / CaseDO-205AB, DO-9, Stud
SpeedStandard Recovery >500ns
Speed200 mA
TechnologyStandard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]800 V
Voltage - Forward (Vf) (Max) @ If1.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 80$ 55.63

Description

General part information

S320 Series

Diode 800 V 320A Chassis, Stud Mount DO-205AB (DO-9)

Documents

Technical documentation and resources