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BYC30W-600PT2Q - WNSXXXXXXXXWQ

BYC30W-600PT2Q

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WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 30A TO247-2

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BYC30W-600PT2Q - WNSXXXXXXXXWQ

BYC30W-600PT2Q

Active
WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 30A TO247-2

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBYC30W-600PT2Q
Current - Average Rectified (Io)30 A
Current - Reverse Leakage @ Vr10 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 °C
Package / CaseTO-247-2
Reverse Recovery Time (trr)34 ns
Speed200 mA, 500 ns
Supplier Device PackageTO-247-2
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]600 V
Voltage - Forward (Vf) (Max) @ If2.75 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 1$ 3.13
10$ 2.03
450$ 1.16
900$ 1.07
1350$ 1.02
2250$ 0.97
5400$ 0.96

Description

General part information

BYC30 Series

Diode 600 V 30A Through Hole TO-247-2

Documents

Technical documentation and resources

No documents available