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BYC30-1200PQ - NXPSC06650Q

BYC30-1200PQ

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WeEn Semiconductors Co., Ltd

DIODE GEN PURP 1.2KV 30A TO220AC

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BYC30-1200PQ - NXPSC06650Q

BYC30-1200PQ

Active
WeEn Semiconductors Co., Ltd

DIODE GEN PURP 1.2KV 30A TO220AC

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBYC30-1200PQ
Current - Average Rectified (Io)30 A
Current - Reverse Leakage @ Vr250 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 °C
Package / CaseTO-220-2
Reverse Recovery Time (trr)65 ns
Speed200 mA, 500 ns
Supplier Device PackageTO-220AC
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]1.2 kV
Voltage - Forward (Vf) (Max) @ If3.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 6000$ 1.00

Description

General part information

BYC30 Series

Diode 1200 V 30A Through Hole TO-220AC

Documents

Technical documentation and resources

No documents available