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BYC30W-1200PQ - TO-247-2

BYC30W-1200PQ

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WeEn Semiconductors Co., Ltd

DIODE GEN PURP 1.2KV 30A TO247-2

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BYC30W-1200PQ - TO-247-2

BYC30W-1200PQ

Active
WeEn Semiconductors Co., Ltd

DIODE GEN PURP 1.2KV 30A TO247-2

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBYC30W-1200PQ
Current - Average Rectified (Io)30 A
Current - Reverse Leakage @ Vr250 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 °C
Package / CaseTO-247-2
Reverse Recovery Time (trr)65 ns
Speed200 mA, 500 ns
Supplier Device PackageTO-247-2
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]1.2 kV
Voltage - Forward (Vf) (Max) @ If3.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.95
30$ 2.37
120$ 1.95
510$ 1.65
1020$ 1.40
2010$ 1.33
5010$ 1.28

Description

General part information

BYC30 Series

Diode 1200 V 30A Through Hole TO-247-2

Documents

Technical documentation and resources

No documents available