
BYC30W-1200PQ
ActiveWeEn Semiconductors Co., Ltd
DIODE GEN PURP 1.2KV 30A TO247-2
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BYC30W-1200PQ
ActiveWeEn Semiconductors Co., Ltd
DIODE GEN PURP 1.2KV 30A TO247-2
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BYC30W-1200PQ |
|---|---|
| Current - Average Rectified (Io) | 30 A |
| Current - Reverse Leakage @ Vr | 250 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 °C |
| Package / Case | TO-247-2 |
| Reverse Recovery Time (trr) | 65 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | TO-247-2 |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1.2 kV |
| Voltage - Forward (Vf) (Max) @ If | 3.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 2.95 | |
| 30 | $ 2.37 | |||
| 120 | $ 1.95 | |||
| 510 | $ 1.65 | |||
| 1020 | $ 1.40 | |||
| 2010 | $ 1.33 | |||
| 5010 | $ 1.28 | |||
Description
General part information
BYC30 Series
Diode 1200 V 30A Through Hole TO-247-2
Documents
Technical documentation and resources
No documents available