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SGH30N60RUFTU

Obsolete
ON Semiconductor

IGBT 600V 48A 235W TO3P

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DocumentsDatasheet

SGH30N60RUFTU

Obsolete
ON Semiconductor

IGBT 600V 48A 235W TO3P

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSGH30N60RUFTU
Current - Collector Pulsed (Icm)90 A
Gate Charge85 nC
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-65-3, TO-3P-3
Power - Max [Max]235 W
Supplier Device PackageTO-3PN
Switching Energy [custom]814 µJ
Switching Energy [custom]919 µJ
Td (on/off) @ 25°C30 ns, 54 ns
Test Condition30 A, 300 V, 15 V, 7 Ohm
Vce(on) (Max) @ Vge, Ic2.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

SGH30N60RUFD Series

ON Semiconductor's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.

Documents

Technical documentation and resources