SGH30N60RUFDTU

Obsolete

ON Semiconductor

DISCRETE, SHORT CIRCUIT RATED IGBT WITH DIODE

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Search across all available documentation for this part.

DocumentsDatasheet Package Drawing-340BZ-TO-3P-3LD / EIAJ SC-65, ISOLATED +1

SGH30N60RUFDTU

Obsolete

ON Semiconductor

DISCRETE, SHORT CIRCUIT RATED IGBT WITH DIODE

Deep-Dive with AI

DocumentsDatasheet Package Drawing-340BZ-TO-3P-3LD / EIAJ SC-65, ISOLATED +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SGH30N60RUFDTU

Current - Collector Pulsed (Icm)	90 A
Gate Charge	85 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power - Max [Max]	235 W
Reverse Recovery Time (trr)	95 ns
Supplier Device Package	TO-3P
Switching Energy [custom]	814 µJ
Switching Energy [custom]	919 µJ
Td (on/off) @ 25°C	30 ns, 54 ns
Test Condition	30 A, 300 V, 15 V, 7 Ohm
Vce(on) (Max) @ Vge, Ic	2.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

SGH30N60RUFD Series

Discrete, Short Circuit Rated IGBT with Diode

Part	Test Condition	Switching Energy [custom]	Switching Energy [custom]	Package / Case	Power - Max [Max]	Td (on/off) @ 25°C	Mounting Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Pulsed (Icm)	Gate Charge	Reverse Recovery Time (trr)
ON Semiconductor SGH30N60RUFTU	7 Ohm 15 V 30 A 300 V	814 µJ	919 µJ	SC-65-3 TO-3P-3	235 W	30 ns 54 ns	Through Hole	TO-3PN	-55 °C	150 °C	2.8 V	600 V	90 A	85 nC
ON Semiconductor SGH30N60RUFDTU	7 Ohm 15 V 30 A 300 V	814 µJ	919 µJ	SC-65-3 TO-3P-3	235 W	30 ns 54 ns	Through Hole	TO-3P	-55 °C	150 °C	2.8 V	600 V	90 A	85 nC	95 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

SGH30N60RUFD Series

ON Semiconductor's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.