SGH30N60RUFD Series

Discrete, Short Circuit Rated IGBT with Diode

Catalog

Discrete, Short Circuit Rated IGBT with Diode

Part	Test Condition	Switching Energy [custom]	Switching Energy [custom]	Package / Case	Power - Max [Max]	Td (on/off) @ 25°C	Mounting Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Pulsed (Icm)	Gate Charge	Reverse Recovery Time (trr)
ON Semiconductor SGH30N60RUFTU	7 Ohm 15 V 30 A 300 V	814 µJ	919 µJ	SC-65-3 TO-3P-3	235 W	30 ns 54 ns	Through Hole	TO-3PN	-55 °C	150 °C	2.8 V	600 V	90 A	85 nC
ON Semiconductor SGH30N60RUFDTU	7 Ohm 15 V 30 A 300 V	814 µJ	919 µJ	SC-65-3 TO-3P-3	235 W	30 ns 54 ns	Through Hole	TO-3P	-55 °C	150 °C	2.8 V	600 V	90 A	85 nC	95 ns

Catalog

Discrete, Short Circuit Rated IGBT with Diode

Key Features

• Short Circuit rated 10us @ TC= 100°C, VGE= 15V

• High Speed Switching

• Low Saturation Voltage : VCE(sat)= 2.2 V @ IC= 30A

• High Input Impedance

• CO-PAK, IGBT with FRD : trr= 50ns (typ.)

Description

ON Semiconductor's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.