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2N7000,126 - TO-92-3

2N7000,126

Obsolete
Freescale Semiconductor - NXP

MOSFET N-CH 60V 300MA TO92-3

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2N7000,126 - TO-92-3

2N7000,126

Obsolete
Freescale Semiconductor - NXP

MOSFET N-CH 60V 300MA TO92-3

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

Specification2N7000,126
Current - Continuous Drain (Id) @ 25°C300 mA
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds40 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-226-3, TO-92-3
Power Dissipation (Max) [Max]830 mW
Rds On (Max) @ Id, Vgs5 Ohm
Supplier Device PackageTO-92-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

2N70 Series

N-Channel 60 V 300mA (Tc) 830mW (Ta) Through Hole TO-92-3

Documents

Technical documentation and resources