
2N7000,126
ObsoleteFreescale Semiconductor - NXP
MOSFET N-CH 60V 300MA TO92-3
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2N7000,126
ObsoleteFreescale Semiconductor - NXP
MOSFET N-CH 60V 300MA TO92-3
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N7000,126 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 300 mA |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 40 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-226-3, TO-92-3 |
| Power Dissipation (Max) [Max] | 830 mW |
| Rds On (Max) @ Id, Vgs | 5 Ohm |
| Supplier Device Package | TO-92-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
2N70 Series
N-Channel 60 V 300mA (Tc) 830mW (Ta) Through Hole TO-92-3
Documents
Technical documentation and resources