MOSFET N-CH 60V 310MA SC75
| Part | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Supplier Device Package | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Power Dissipation (Max) [Max] | Package / Case | Mounting Type | Technology | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Freescale Semiconductor - NXP | 310 mA | 20 V | SC-75 | 60 V | 10 V | 5 V | 50 pF | N-Channel | 250 mW | SC-75 SOT-416 | Surface Mount | MOSFET (Metal Oxide) | 2.4 V | -55 °C | 150 °C | 1.6 Ohm | |||
Freescale Semiconductor - NXP | 340 mA | 15 V | SOT-23 (TO-236AB) | 60 V | 40 pF | N-Channel | 830 mW | SC-59 SOT-23-3 TO-236-3 | Surface Mount | MOSFET (Metal Oxide) | 2 V | -65 °C | 150 °C | 3.9 Ohm | 4.5 V 10 V | ||||
Freescale Semiconductor - NXP | 290 mA | 20 V | SC-75 | 60 V | 10 V | 5 V | 50 pF | N-Channel | 260 mW | SC-75 SOT-416 | Surface Mount | MOSFET (Metal Oxide) | 2.1 V | 1.6 Ohm | 0.6 nC | 150 °C | |||
Freescale Semiconductor - NXP | 300 mA | 30 V | TO-92-3 | 60 V | 40 pF | N-Channel | 830 mW | TO-226-3 TO-92-3 | Through Hole | MOSFET (Metal Oxide) | 2 V | -55 °C | 150 °C | 5 Ohm | 4.5 V 10 V |