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1N5818 - 1N5400G

1N5818

Active
ON Semiconductor

1.0 A, 30 V, SCHOTTKY RECTIFIER

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1N5818 - 1N5400G

1N5818

Active
ON Semiconductor

1.0 A, 30 V, SCHOTTKY RECTIFIER

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification1N5818
Current - Average Rectified (Io)1 A
Current - Reverse Leakage @ Vr1 mA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-50 °C
Package / CaseDO-204AC, DO-15, Axial
Speed200 mA, 500 ns
Supplier Device PackageDO15/DO204AC
TechnologySchottky
Voltage - DC Reverse (Vr) (Max) [Max]30 V
Voltage - Forward (Vf) (Max) @ If875 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 53$ 5.73
126$ 5.16
4000$ 0.05
8000$ 0.05
12000$ 0.04
28000$ 0.04
100000$ 0.03
200000$ 0.03
Cut Tape (CT) 1$ 0.30
10$ 0.25
25$ 0.21
100$ 0.13
250$ 0.10
500$ 0.09
1000$ 0.06
Tape & Reel (TR) 5000$ 0.06
10000$ 0.05
25000$ 0.05
50000$ 0.04
125000$ 0.04

Description

General part information

1N5818 Series

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes.

Documents

Technical documentation and resources

No documents available