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1N5818G - 1N5818G

1N5818G

Active
ON Semiconductor

SCHOTTKY RECTIFIER, 30 V, 1 A, SINGLE, DO-41, 2 PINS, 550 MV

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1N5818G - 1N5818G

1N5818G

Active
ON Semiconductor

SCHOTTKY RECTIFIER, 30 V, 1 A, SINGLE, DO-41, 2 PINS, 550 MV

Technical Specifications

Parameters and characteristics for this part

Specification1N5818G
Current - Average Rectified (Io)1 A
Current - Reverse Leakage @ Vr1 mA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]125 °C
Operating Temperature - Junction [Min]-65 C
Package / CaseDO-204AL, DO-41, Axial
Speed200 mA, 500 ns
Supplier Device PackageAxial
TechnologySchottky
Voltage - DC Reverse (Vr) (Max) [Max]30 V
Voltage - Forward (Vf) (Max) @ If550 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 1$ 0.52
10$ 0.32
100$ 0.20
500$ 0.15
1000$ 0.14
2000$ 0.12
5000$ 0.11
10000$ 0.10
50000$ 0.08
NewarkEach 1$ 0.21
10$ 0.17
100$ 0.14
500$ 0.12
1000$ 0.11
3000$ 0.11
10000$ 0.09
ON SemiconductorN/A 1$ 0.08

Description

General part information

1N5818 Series

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes.