1N5818 Series

1.0 A, 30 V, Schottky Rectifier

Catalog

1.0 A, 30 V, Schottky Rectifier

Part	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Technology	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Supplier Device Package
ON Semiconductor 1N5818G	1 mA	30 V	Axial DO-204AL DO-41	Schottky	550 mV	1 A	Through Hole	125 °C	-65 C	200 mA 500 ns	Axial
ON Semiconductor 1N5818	1 mA	30 V	Axial DO-15 DO-204AC	Schottky	875 mV	1 A	Through Hole	150 °C	-50 °C	200 mA 500 ns	DO15/DO204AC
ON Semiconductor 1N5818RL	1 mA	30 V	Axial DO-204AL DO-41	Schottky	550 mV	1 A	Through Hole	125 °C	-65 C	200 mA 500 ns	Axial

Catalog

1.0 A, 30 V, Schottky Rectifier

Key Features

• Extremely Low vF

• Low Stored Charge, Majority Carrier Conduction

• Low Power Loss/High Efficiency Mechanical CharacteristicsMechanical Characteristics:

• Case: Epoxy, Molded

• Weight: 0.4 gram (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable

• Shipped in plastic bags, 1000 per bag.

• Available Tape and Reeled, 5000 per reel, by adding a "RL" suffix to the part number

• Polarity: Cathode Indicated by Polarity Band

• Marking: 1N5817, 1N5818, 1N5819

• Lead Temperature for Soldering Purposes: 260°C Max for 10 seconds

• These are Pb-Free Devices

Description

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes.