
71V424S15PHGI
ObsoleteRenesas Electronics Corporation
3.3V 512K X 8 ASYNCHRONOUS STATIC RAM CENTER POWER & GND PINOUT
Deep-Dive with AI
Search across all available documentation for this part.

71V424S15PHGI
ObsoleteRenesas Electronics Corporation
3.3V 512K X 8 ASYNCHRONOUS STATIC RAM CENTER POWER & GND PINOUT
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 71V424S15PHGI |
|---|---|
| Access Time | 15 ns |
| Memory Format | SRAM |
| Memory Interface | Parallel |
| Memory Organization | 512 K |
| Memory Size | 512 kb |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 10.16 mm |
| Package / Case | 10.16 mm |
| Package / Case | 44-TSOP |
| Supplier Device Package | 44-TSOP II |
| Technology | SRAM - Asynchronous |
| Voltage - Supply [Max] | 3.6 V |
| Voltage - Supply [Min] | 3 V |
| Write Cycle Time - Word, Page | 15 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
71V424 Series
The 71V424 3.3V CMOS SRAM is organized as 512K x 8. All bidirectional inputs and outputs of the 71V424 are TTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.
Documents
Technical documentation and resources