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71V424S10YG8 - 71V424 - Block Diagram

71V424S10YG8

Obsolete
Renesas Electronics Corporation

3.3V 512K X 8 ASYNCHRONOUS STATIC RAM CENTER POWER & GND PINOUT

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71V424S10YG8 - 71V424 - Block Diagram

71V424S10YG8

Obsolete
Renesas Electronics Corporation

3.3V 512K X 8 ASYNCHRONOUS STATIC RAM CENTER POWER & GND PINOUT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification71V424S10YG8
Access Time10 ns
Memory FormatSRAM
Memory InterfaceParallel
Memory Organization512 K
Memory Size512 kb
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]70 °C
Operating Temperature [Min]0 °C
Package / Case36-BSOJ
Package / Case [x]10.16 mm
Package / Case [x]0.4 in
Supplier Device Package36-SOJ
TechnologySRAM - Asynchronous
Voltage - Supply [Max]3.6 V
Voltage - Supply [Min]3 V
Write Cycle Time - Word, Page10 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 7.64
10$ 7.03
25$ 6.89
50$ 6.86
100$ 6.16
250$ 5.97
Digi-Reel® 1$ 7.64
10$ 7.03
25$ 6.89
50$ 6.86
100$ 6.16
250$ 5.97
Tape & Reel (TR) 500$ 5.68
1000$ 5.48

Description

General part information

71V424 Series

The 71V424 3.3V CMOS SRAM is organized as 512K x 8. All bidirectional inputs and outputs of the 71V424 are TTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

Documents

Technical documentation and resources