
71V424S12PHGI8
ActiveRenesas Electronics Corporation
3.3V 512K X 8 ASYNCHRONOUS STATIC RAM CENTER POWER & GND PINOUT
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71V424S12PHGI8
ActiveRenesas Electronics Corporation
3.3V 512K X 8 ASYNCHRONOUS STATIC RAM CENTER POWER & GND PINOUT
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 71V424S12PHGI8 |
|---|---|
| Access Time | 12 ns |
| Memory Format | SRAM |
| Memory Interface | Parallel |
| Memory Organization | 512 K |
| Memory Size | 512 kb |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 10.16 mm |
| Package / Case | 10.16 mm |
| Package / Case | 44-TSOP |
| Supplier Device Package | 44-TSOP II |
| Technology | SRAM - Asynchronous |
| Voltage - Supply [Max] | 3.6 V |
| Voltage - Supply [Min] | 3 V |
| Write Cycle Time - Word, Page | 12 ns |
71V424 Series
3.3V 512K x 8 Asynchronous Static RAM Center Power & GND Pinout
| Part | Memory Size | Memory Type | Access Time | Voltage - Supply [Max] | Voltage - Supply [Min] | Package / Case | Package / Case [x] | Package / Case [x] | Memory Interface | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package | Mounting Type | Technology | Write Cycle Time - Word, Page | Memory Organization | Memory Format | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics Corporation | 512 kb | Volatile | 10 ns | 3.6 V | 3 V | 36-BSOJ | 10.16 mm | 0.4 in | Parallel | 70 °C | 0 °C | 36-SOJ | Surface Mount | SRAM - Asynchronous | 10 ns | 512 K | SRAM | ||
Renesas Electronics Corporation | 512 kb | Volatile | 15 ns | 3.6 V | 3 V | 36-BSOJ | 10.16 mm | 0.4 in | Parallel | 85 °C | -40 °C | 36-SOJ | Surface Mount | SRAM - Asynchronous | 15 ns | 512 K | SRAM | ||
Renesas Electronics Corporation | 512 kb | Volatile | 15 ns | 3.6 V | 3 V | 44-TSOP | Parallel | 85 °C | -40 °C | 44-TSOP II | Surface Mount | SRAM - Asynchronous | 15 ns | 512 K | SRAM | 10.16 mm | 10.16 mm | ||
Renesas Electronics Corporation | 512 kb | Volatile | 15 ns | 3.6 V | 3 V | 44-TSOP | Parallel | 70 °C | 0 °C | 44-TSOP II | Surface Mount | SRAM - Asynchronous | 15 ns | 512 K | SRAM | 10.16 mm | 10.16 mm | ||
Renesas Electronics Corporation | 512 kb | Volatile | 15 ns | 3.6 V | 3 V | 44-TSOP | Parallel | 85 °C | -40 °C | 44-TSOP II | Surface Mount | SRAM - Asynchronous | 15 ns | 512 K | SRAM | 10.16 mm | 10.16 mm | ||
Renesas Electronics Corporation | 512 kb | Volatile | 12 ns | 3.6 V | 3 V | 44-TSOP | Parallel | 85 °C | -40 °C | 44-TSOP II | Surface Mount | SRAM - Asynchronous | 12 ns | 512 K | SRAM | 10.16 mm | 10.16 mm | ||
Renesas Electronics Corporation | 512 kb | Volatile | 10 ns | 3.6 V | 3 V | 36-BSOJ | 10.16 mm | 0.4 in | Parallel | 85 °C | -40 °C | 36-SOJ | Surface Mount | SRAM - Asynchronous | 10 ns | 512 K | SRAM | ||
Renesas Electronics Corporation | 512 kb | Volatile | 15 ns | 3.6 V | 3 V | 36-BSOJ | 10.16 mm | 0.4 in | Parallel | 85 °C | -40 °C | 36-SOJ | Surface Mount | SRAM - Asynchronous | 15 ns | 512 K | SRAM | ||
Renesas Electronics Corporation | 512 kb | Volatile | 15 ns | 3.6 V | 3 V | 36-BSOJ | 10.16 mm | 0.4 in | Parallel | 70 °C | 0 °C | 36-SOJ | Surface Mount | SRAM - Asynchronous | 15 ns | 512 K | SRAM | ||
Renesas Electronics Corporation | 512 kb | Volatile | 12 ns | 3.6 V | 3 V | 44-TSOP | Parallel | 85 °C | -40 °C | 44-TSOP II | Surface Mount | SRAM - Asynchronous | 12 ns | 512 K | SRAM | 10.16 mm | 10.16 mm |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
71V424 Series
The 71V424 3.3V CMOS SRAM is organized as 512K x 8. All bidirectional inputs and outputs of the 71V424 are TTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.
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Technical documentation and resources