C3D06065E

Wolfspeed

DIODE SIL CARB 650V 20A TO252-2

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Wolfspeed

DIODE SIL CARB 650V 20A TO252-2

Technical Specifications

Parameters and characteristics for this part

Specification	C3D06065E

Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-252-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Technology	Package / Case	Current - Reverse Leakage @ Vr	Speed	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Current - Average Rectified (Io)	Capacitance @ Vr, F
Wolfspeed C3D06065E	650 V	1.7 V	SiC (Silicon Carbide) Schottky	DPAK (2 Leads + Tab) SC-63 TO-252-3	50 µA	No Recovery Time	Surface Mount	175 ░C	-55 C	TO-252-2
Wolfspeed C3D06065A	650 V	1.8 V	SiC (Silicon Carbide) Schottky	TO-220-2	60 µA	No Recovery Time	Through Hole	175 ░C	-55 C	TO-220-2	19 A	294 pF
Wolfspeed C3D06065I	650 V	1.7 V	SiC (Silicon Carbide) Schottky	TO-220-2 Isolated Tab	50 µA	No Recovery Time	Through Hole	175 ░C	-55 C	TO-220-2 Isolated Tab	13 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 20A Surface Mount TO-252-2

Technical documentation and resources