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DIODE SIL CARB 650V 20A TO252-2
| Part | Reverse Recovery Time (trr) | Voltage - DC Reverse (Vr) (Max) [Max] | Voltage - Forward (Vf) (Max) @ If | Technology | Package / Case | Current - Reverse Leakage @ Vr | Speed | Mounting Type | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Supplier Device Package | Current - Average Rectified (Io) | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Wolfspeed | 0 ns | 650 V | 1.7 V | SiC (Silicon Carbide) Schottky | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 50 µA | No Recovery Time | Surface Mount | 175 ░C | -55 C | TO-252-2 | ||
Wolfspeed | 0 ns | 650 V | 1.8 V | SiC (Silicon Carbide) Schottky | TO-220-2 | 60 µA | No Recovery Time | Through Hole | 175 ░C | -55 C | TO-220-2 | 19 A | 294 pF |
Wolfspeed | 0 ns | 650 V | 1.7 V | SiC (Silicon Carbide) Schottky | TO-220-2 Isolated Tab | 50 µA | No Recovery Time | Through Hole | 175 ░C | -55 C | TO-220-2 Isolated Tab | 13 A |