SCT3160KW7TL
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 17 A, 1.2 KV, 0.16 OHM, TO-263 (D2PAK)
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SCT3160KW7TL
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 17 A, 1.2 KV, 0.16 OHM, TO-263 (D2PAK)
Technical Specifications
Parameters and characteristics for this part
| Specification | SCT3160KW7TL |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 17 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 42 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 398 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | D2PAK (7 Leads + Tab), TO-263-8, TO-263CA |
| Power Dissipation (Max) [Max] | 100 W |
| Rds On (Max) @ Id, Vgs | 208 mOhm |
| Supplier Device Package | TO-263-7 |
| Vgs(th) (Max) @ Id | 5.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SCT3160KLHR Series
AEC-Q101 qualified automotive grade product. SCT3160KLHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Documents
Technical documentation and resources