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SCT3160KLHRC11 - Product dimension image

SCT3160KLHRC11

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Rohm Semiconductor

1200V, 17A, THD, TRENCH-STRUCTURE, SILICON-CARBIDE (SIC) MOSFET FOR AUTOMOTIVE

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Search across all available documentation for this part.

DocumentsSiC MOSFET Layout Design Considerations Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)+42

SCT3160KLHRC11 - Product dimension image

SCT3160KLHRC11

Active

Rohm Semiconductor

1200V, 17A, THD, TRENCH-STRUCTURE, SILICON-CARBIDE (SIC) MOSFET FOR AUTOMOTIVE

Deep-Dive with AI

DocumentsSiC MOSFET Layout Design Considerations Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)+42

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCT3160KLHRC11

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	42 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	398 pF
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	103 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	208 mOhm
Supplier Device Package	TO-247N
Vgs(th) (Max) @ Id	5.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 9.77
		30	$ 8.99

Description

General part information

SCT3160KLHR Series

AEC-Q101 qualified automotive grade product. SCT3160KLHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

Documents

Technical documentation and resources

SiC MOSFET Layout Design Considerations

Technical Article

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Notes for Temperature Measurement Using Thermocouples

Precautions during gate-source voltage measurement for SiC MOSFET

Schematic Design & Verification

Thermal Resistance Measurement Method for SiC MOSFET

4 Steps for Successful Thermal Designing of Power Devices

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Precautions for Thermal Resistance of Insulation Sheet

5kW High-Efficiency Fan-less Inverter

Schematic Design & Verification

Calculating Power Loss from Measured Waveforms

Schematic Design & Verification

Anti-Whisker formation

Package Information

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level

Taping Information

Package Information

Types and Features of Transistors

Application Note

How to Use PLECS Models

Technical Article

How to measure the oscillation occurs between parallel-connected devices

Technical Article

Generation Mechanism of Voltage Surge on Commutation Side (Basic)

Technical Article

Two-Resistor Model for Thermal Simulation

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

About Flammability of Materials

Environmental Data

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Explanation for Marking - TO-247N SiC_Marking-e.pdf

Package Information

Measurement Method and Usage of Thermal Resistance RthJC

PCB Layout Thermal Design Guide

Best practices for the connection of Driver Source/Emitter terminals in discrete devices

Schematic Design & Verification

Basics and Design Guidelines for Gate Drive Circuits

Schematic Design & Verification

Method for Monitoring Switching Waveform

Schematic Design & Verification

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

What Is Thermal Design

Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs

Compliance of the ELV directive

Environmental Data

About Export Administration Regulations (EAR)

Export Information

Gate-Source Voltage Surge Suppression Methods

Schematic Design & Verification

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules

Technical Article

Solving the challenges of driving SiC MOSFETs with new packaging developments

Judgment Criteria of Thermal Evaluation

How to Create Symbols for PSpice Models

Snubber circuit design methods for SiC MOSFET

Schematic Design & Verification

Package Dimensions

Package Information

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

SCT PPAP Statement

Related Document

SCT3160KLHR Series

1200V, 17A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Part	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Mounting Type	Qualification	Drive Voltage (Max Rds On, Min Rds On)	Grade
Rohm Semiconductor SCT3160KW7TL	175 °C	42 nC	1200 V	TO-263-7	398 pF	208 mOhm	N-Channel	17 A	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	100 W	5.6 V	Surface Mount
Rohm Semiconductor SCT3160KLHRC11	175 °C	42 nC	1200 V	TO-247N	398 pF	208 mOhm	N-Channel	17 A	TO-247-3	103 W	5.6 V	Through Hole	AEC-Q101	18 V	Automotive