SCT3160KLHR Series

1200V, 17A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Catalog

1200V, 17A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Part	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Mounting Type	Qualification	Drive Voltage (Max Rds On, Min Rds On)	Grade
Rohm Semiconductor SCT3160KW7TL	175 °C	42 nC	1200 V	TO-263-7	398 pF	208 mOhm	N-Channel	17 A	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	100 W	5.6 V	Surface Mount
Rohm Semiconductor SCT3160KLHRC11	175 °C	42 nC	1200 V	TO-247N	398 pF	208 mOhm	N-Channel	17 A	TO-247-3	103 W	5.6 V	Through Hole	AEC-Q101	18 V	Automotive

Catalog

1200V, 17A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Key Features

• Low on-resistance, Fast switching speed, Fast reverse recovery, Easy to parallel, Simple to drive, Pb-free lead plating ; RoHS compliant, Qualified to AEC-Q101

Description

AEC-Q101 qualified automotive grade product. SCT3160KLHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.