1N5820G
ActiveON Semiconductor
REC SURM 3A 20V SCTKY ROHS COMPLIANT: YES
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1N5820G
ActiveON Semiconductor
REC SURM 3A 20V SCTKY ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 1N5820G |
|---|---|
| Current - Average Rectified (Io) | 3 A |
| Current - Reverse Leakage @ Vr | 2 mA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 125 °C |
| Operating Temperature - Junction [Min] | -65 C |
| Package / Case | Axial, DO-27, DO-201AA |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | Axial |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 20 V |
| Voltage - Forward (Vf) (Max) @ If | 475 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 0.97 | |
| 10 | $ 0.61 | |||
| 100 | $ 0.40 | |||
| 500 | $ 0.31 | |||
| 1000 | $ 0.28 | |||
| 2000 | $ 0.25 | |||
| 5000 | $ 0.22 | |||
| 10000 | $ 0.21 | |||
| 50000 | $ 0.19 | |||
| Newark | Each | 1 | $ 0.58 | |
| 10 | $ 0.50 | |||
| 100 | $ 0.36 | |||
| 500 | $ 0.27 | |||
| 1000 | $ 0.25 | |||
| 2500 | $ 0.24 | |||
| 10000 | $ 0.23 | |||
| ON Semiconductor | N/A | 1 | $ 0.20 | |
Description
General part information
1N5820 Series
The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes.