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1N5820RL - MBR350RLG

1N5820RL

Obsolete
ON Semiconductor

SCHOTTKY BARRIER RECTIFIER, 3.0 A, 20 V

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1N5820RL - MBR350RLG

1N5820RL

Obsolete
ON Semiconductor

SCHOTTKY BARRIER RECTIFIER, 3.0 A, 20 V

Technical Specifications

Parameters and characteristics for this part

Specification1N5820RL
Current - Average Rectified (Io)3 A
Current - Reverse Leakage @ Vr2 mA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]125 °C
Operating Temperature - Junction [Min]-65 C
Package / CaseAxial, DO-27, DO-201AA
Speed200 mA, 500 ns
Supplier Device PackageAxial
TechnologySchottky
Voltage - DC Reverse (Vr) (Max) [Max]20 V
Voltage - Forward (Vf) (Max) @ If475 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

1N5820 Series

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes.