1N5820 Series

Schottky Barrier Rectifier, 3.0 A, 20 V

Catalog

Schottky Barrier Rectifier, 3.0 A, 20 V

Part	Package / Case	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Supplier Device Package	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Technology	Mounting Type
ON Semiconductor 1N5820	DO-201AD Axial	475 mV	125 °C	-65 C	20 V	200 mA 500 ns	DO-201AD	3 A	500 µA	190 pF	Schottky	Through Hole
ON Semiconductor 1N5820G	Axial DO-201AA DO-27	475 mV	125 °C	-65 C	20 V	200 mA 500 ns	Axial	3 A	2 mA		Schottky	Through Hole
ON Semiconductor 1N5820RL	Axial DO-201AA DO-27	475 mV	125 °C	-65 C	20 V	200 mA 500 ns	Axial	3 A	2 mA		Schottky	Through Hole

Catalog

Schottky Barrier Rectifier, 3.0 A, 20 V

Key Features

• Extremely Low vF

• Low Power Loss/High Efficiency

• Low Stored Charge, Majority Carrier ConductionMechanical Characteristics:

• Case: Epoxy, Molded

• Weight: 1.1 gram (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable

• Lead Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds

• Shipped in plastic bags, 5,000 per bag

• Available Tape and Reeled, 1500 per reel, by adding a "RL'' suffix to the part number

• Polarity: Cathode indicated by Polarity Band

• Marking: 1N5820, 1N5821, 1N5822

• Pb-Free Packages are Available

Description

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes.