GHXS030A120S-D1E

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SemiQ

BRIDGE RECT 1P 1.2KV 30A SOT227

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SemiQ

BRIDGE RECT 1P 1.2KV 30A SOT227

Technical Specifications

Parameters and characteristics for this part

Specification	GHXS030A120S-D1E

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	200 µA
Diode Type	Single Phase
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Supplier Device Package	SOT-227
Technology	Silicon Carbide Schottky
Voltage - Forward (Vf) (Max) @ If	1.7 V
Voltage - Peak Reverse (Max) [Max]	1.2 kV

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Package / Case	Diode Configuration	Supplier Device Package	Speed	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io) (per Diode)	Technology	Mounting Type	Current - Average Rectified (Io)	Voltage - Peak Reverse (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Diode Type
SemiQ GHXS030A120S-D3	1.2 kV	175 ░C	-55 C	200 µA	SOT-227-4 miniBLOC	2 Independent	SOT-227	No Recovery Time	1.7 V	30 A	SiC (Silicon Carbide) Schottky	Chassis Mount
SemiQ GHXS030A120S-D1E				200 µA	SOT-227-4 miniBLOC		SOT-227		1.7 V		Silicon Carbide Schottky	Chassis Mount	30 A	1.2 kV	-55 °C	175 ░C	Single Phase
SemiQ GHXS030A120S-D1				200 µA	SOT-227-4 miniBLOC		SOT-227		1.7 V		Silicon Carbide Schottky	Chassis Mount	30 A	1.2 kV	-55 °C	175 ░C	Single Phase

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Silicon Carbide Schottky 1.2 kV Chassis Mount SOT-227

Technical documentation and resources