DIODE MOD SIC 1200V 30A SOT227
| Part | Voltage - DC Reverse (Vr) (Max) [Max] | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Current - Reverse Leakage @ Vr | Package / Case | Diode Configuration | Supplier Device Package | Speed | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) (per Diode) | Technology | Mounting Type | Current - Average Rectified (Io) | Voltage - Peak Reverse (Max) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Diode Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SemiQ | 1.2 kV | 175 ░C | -55 C | 200 µA | SOT-227-4 miniBLOC | 2 Independent | SOT-227 | No Recovery Time | 1.7 V | 30 A | SiC (Silicon Carbide) Schottky | Chassis Mount | |||||
SemiQ | 200 µA | SOT-227-4 miniBLOC | SOT-227 | 1.7 V | Silicon Carbide Schottky | Chassis Mount | 30 A | 1.2 kV | -55 °C | 175 ░C | Single Phase | ||||||
SemiQ | 200 µA | SOT-227-4 miniBLOC | SOT-227 | 1.7 V | Silicon Carbide Schottky | Chassis Mount | 30 A | 1.2 kV | -55 °C | 175 ░C | Single Phase |