GHXS030A120S-D3

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SemiQ

DIODE MOD SIC 1200V 30A SOT227

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SemiQ

DIODE MOD SIC 1200V 30A SOT227

Technical Specifications

Parameters and characteristics for this part

Specification	GHXS030A120S-D3

Current - Average Rectified (Io) (per Diode)	30 A
Current - Reverse Leakage @ Vr	200 µA
Diode Configuration	2 Independent
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SOT-227-4, miniBLOC
Speed	No Recovery Time
Supplier Device Package	SOT-227
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Package / Case	Diode Configuration	Supplier Device Package	Speed	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io) (per Diode)	Technology	Mounting Type	Current - Average Rectified (Io)	Voltage - Peak Reverse (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Diode Type
SemiQ GHXS030A120S-D3	1.2 kV	175 ░C	-55 C	200 µA	SOT-227-4 miniBLOC	2 Independent	SOT-227	No Recovery Time	1.7 V	30 A	SiC (Silicon Carbide) Schottky	Chassis Mount
SemiQ GHXS030A120S-D1E				200 µA	SOT-227-4 miniBLOC		SOT-227		1.7 V		Silicon Carbide Schottky	Chassis Mount	30 A	1.2 kV	-55 °C	175 ░C	Single Phase
SemiQ GHXS030A120S-D1				200 µA	SOT-227-4 miniBLOC		SOT-227		1.7 V		Silicon Carbide Schottky	Chassis Mount	30 A	1.2 kV	-55 °C	175 ░C	Single Phase

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 2 Independent 1200 V 30A Chassis Mount SOT-227-4, miniBLOC

Technical documentation and resources