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PJP4NA65H_T0_00001 - TO-220-3

PJP4NA65H_T0_00001

NRND
Panjit International Inc.

650V N-CHANNEL MOSFET

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PJP4NA65H_T0_00001 - TO-220-3

PJP4NA65H_T0_00001

NRND
Panjit International Inc.

650V N-CHANNEL MOSFET

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationPJP4NA65H_T0_00001
Current - Continuous Drain (Id) @ 25°C3 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs16.1 nC
Input Capacitance (Ciss) (Max) @ Vds423 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)44 W
Rds On (Max) @ Id, Vgs3.75 Ohm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 2000$ 0.34

Description

General part information

PJP4 Series

N-Channel 650 V 3A (Ta) 44W (Tc) Through Hole TO-220AB

Documents

Technical documentation and resources