500V N-CHANNEL MOSFET
| Part | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Drain to Source Voltage (Vdss) | Mounting Type | FET Type | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Technology | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Panjit International Inc. | 2.3 Ohm | 9.8 nC | TO-220AB | 30 V | -55 °C | 150 °C | TO-220-3 | 500 V | Through Hole | N-Channel | 90 W | 10 V | 4 A | MOSFET (Metal Oxide) | 449 pF | 4 V | ||
Panjit International Inc. | 3.75 Ohm | 16.1 nC | TO-220AB | 30 V | -55 °C | 150 °C | TO-220-3 | 650 V | Through Hole | N-Channel | 44 W | 10 V | 3 A | MOSFET (Metal Oxide) | 423 pF | 4 V | ||
Panjit International Inc. | 2.4 Ohm | TO-220AB | 30 V | -55 °C | 150 °C | TO-220-3 | 600 V | Through Hole | N-Channel | 10 V | 4 A | MOSFET (Metal Oxide) | 4 V | 100 W | 450 pF |