PJP4NA50A_T0_00001

NRND

Panjit International Inc.

500V N-CHANNEL MOSFET

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NRND

Panjit International Inc.

500V N-CHANNEL MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJP4NA50A_T0_00001

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.8 nC
Input Capacitance (Ciss) (Max) @ Vds	449 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	90 W
Rds On (Max) @ Id, Vgs	2.3 Ohm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Panjit International Inc. PJP4NA50A_T0_00001	2.3 Ohm	9.8 nC	TO-220AB	30 V	-55 °C	150 °C	TO-220-3	500 V	Through Hole	N-Channel	90 W	10 V	4 A	MOSFET (Metal Oxide)	449 pF	4 V
Panjit International Inc. PJP4NA65H_T0_00001	3.75 Ohm	16.1 nC	TO-220AB	30 V	-55 °C	150 °C	TO-220-3	650 V	Through Hole	N-Channel	44 W	10 V	3 A	MOSFET (Metal Oxide)	423 pF	4 V
Panjit International Inc. PJP4NA60_T0_00001	2.4 Ohm		TO-220AB	30 V	-55 °C	150 °C	TO-220-3	600 V	Through Hole	N-Channel		10 V	4 A	MOSFET (Metal Oxide)		4 V	100 W	450 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	2000	$ 0.33

General part information

N-Channel 500 V 4A (Ta) 90W (Tc) Through Hole TO-220AB

Technical documentation and resources