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7164L25TDB - 7164 - Block Diagram

7164L25TDB

Obsolete
Renesas Electronics Corporation

5.0V 8K X 8 ASYNCHRONOUS STATIC RAM

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7164L25TDB - 7164 - Block Diagram

7164L25TDB

Obsolete
Renesas Electronics Corporation

5.0V 8K X 8 ASYNCHRONOUS STATIC RAM

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Technical Specifications

Parameters and characteristics for this part

Specification7164L25TDB
Access Time25 ns
Memory FormatSRAM
Memory InterfaceParallel
Memory Organization8 K
Memory Size64 Kbit
Memory TypeVolatile
Mounting TypeThrough Hole
Operating Temperature [Max]125 °C
Operating Temperature [Min]-55 °C
Package / Case7.62 mm
Package / Case0.3 in
Package / Case28-CDIP
Supplier Device Package28-CDIP
TechnologySRAM - Asynchronous
Voltage - Supply [Max]5.5 V
Voltage - Supply [Min]4.5 V
Write Cycle Time - Word, Page25 ns

7164L Series

5.0V 8K x 8 Asynchronous Static RAM

PartTechnologyOperating Temperature [Max]Operating Temperature [Min]Write Cycle Time - Word, Page [custom]Write Cycle Time - Word, Page [custom]Access TimeMounting TypeMemory SizeMemory OrganizationVoltage - Supply [Min]Voltage - Supply [Max]Memory FormatPackage / CasePackage / CasePackage / CaseMemory InterfaceSupplier Device PackageMemory TypeWrite Cycle Time - Word, PageOperating Temperature [Max]Operating Temperature [Min]Package / Case
Renesas Electronics Corporation
SRAM - Asynchronous
85 °C
-40 °C
45 ns
45 ns
45 ns
Through Hole
64 Kbit
8 K
4.5 V
5.5 V
SRAM
0.3 in
28-DIP
7.62 mm
Parallel
28-PDIP
Volatile
Renesas Electronics Corporation
SRAM - Asynchronous
85 °C
-40 °C
20 ns
Through Hole
64 Kbit
8 K
4.5 V
5.5 V
SRAM
0.3 in
28-DIP
7.62 mm
Parallel
28-PDIP
Volatile
20 ns
Renesas Electronics Corporation
SRAM - Asynchronous
70 ns
Through Hole
64 Kbit
8 K
4.5 V
5.5 V
SRAM
0.6 in
28-CDIP
15.24 mm
Parallel
28-CDIP
Volatile
125 °C
-55 °C
Renesas Electronics Corporation
SRAM - Asynchronous
25 ns
Through Hole
64 Kbit
8 K
4.5 V
5.5 V
SRAM
0.3 in
28-CDIP
7.62 mm
Parallel
28-CDIP
Volatile
25 ns
125 °C
-55 °C
Renesas Electronics Corporation
SRAM - Asynchronous
100 ns
100 ns
100 ns
Through Hole
64 Kbit
8 K
4.5 V
5.5 V
SRAM
0.6 in
28-CDIP
15.24 mm
Parallel
28-CDIP
Volatile
125 °C
-55 °C
Renesas Electronics Corporation
SRAM - Asynchronous
25 ns
Through Hole
64 Kbit
8 K
4.5 V
5.5 V
SRAM
0.6 in
28-CDIP
15.24 mm
Parallel
28-CDIP
Volatile
25 ns
125 °C
-55 °C
Renesas Electronics Corporation
SRAM - Asynchronous
85 °C
-40 °C
20 ns
Through Hole
64 Kbit
8 K
4.5 V
5.5 V
SRAM
0.3 in
28-DIP
7.62 mm
Parallel
28-PDIP
Volatile
20 ns
Renesas Electronics Corporation
SRAM - Asynchronous
85 °C
-40 °C
25 ns
Surface Mount
64 Kbit
8 K
4.5 V
5.5 V
SRAM
7.62 mm
28-BSOJ
Parallel
28-SOJ
Volatile
25 ns
0.3 in
Renesas Electronics Corporation
SRAM - Asynchronous
15 ns
Surface Mount
64 Kbit
8 K
4.5 V
5.5 V
SRAM
32-CLCC
Parallel
32-LCC (13.97x11.43)
Volatile
15 ns
125 °C
-55 °C
Renesas Electronics Corporation
SRAM - Asynchronous
25 ns
Through Hole
64 Kbit
8 K
4.5 V
5.5 V
SRAM
0.3 in
28-CDIP
7.62 mm
Parallel
28-CDIP
Volatile
25 ns
125 °C
-55 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

7164L Series

The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL-compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

Documents

Technical documentation and resources