7164L25DB

Obsolete

Renesas Electronics Corporation

5.0V 8K X 8 ASYNCHRONOUS STATIC RAM

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7164L25DB

Obsolete

Renesas Electronics Corporation

5.0V 8K X 8 ASYNCHRONOUS STATIC RAM

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	7164L25DB

Access Time	25 ns
Memory Format	SRAM
Memory Interface	Parallel
Memory Organization	8 K
Memory Size	64 Kbit
Memory Type	Volatile
Mounting Type	Through Hole
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-55 °C
Package / Case	15.24 mm
Package / Case	0.6 in
Package / Case	28-CDIP
Supplier Device Package	28-CDIP
Technology	SRAM - Asynchronous
Voltage - Supply [Max]	5.5 V
Voltage - Supply [Min]	4.5 V
Write Cycle Time - Word, Page	25 ns

7164L Series

5.0V 8K x 8 Asynchronous Static RAM

Part	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Access Time	Mounting Type	Memory Size	Memory Organization	Voltage - Supply [Min]	Voltage - Supply [Max]	Memory Format	Package / Case	Package / Case	Package / Case	Memory Interface	Supplier Device Package	Memory Type	Write Cycle Time - Word, Page	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case
Renesas Electronics Corporation 7164L45TPGI	SRAM - Asynchronous	85 °C	-40 °C	45 ns	45 ns	45 ns	Through Hole	64 Kbit	8 K	4.5 V	5.5 V	SRAM	0.3 in	28-DIP	7.62 mm	Parallel	28-PDIP	Volatile
Renesas Electronics Corporation 7164L20TPGI	SRAM - Asynchronous	85 °C	-40 °C			20 ns	Through Hole	64 Kbit	8 K	4.5 V	5.5 V	SRAM	0.3 in	28-DIP	7.62 mm	Parallel	28-PDIP	Volatile	20 ns
Renesas Electronics Corporation 7164S70DB	SRAM - Asynchronous					70 ns	Through Hole	64 Kbit	8 K	4.5 V	5.5 V	SRAM	0.6 in	28-CDIP	15.24 mm	Parallel	28-CDIP	Volatile		125 °C	-55 °C
Renesas Electronics Corporation 7164L25TDB	SRAM - Asynchronous					25 ns	Through Hole	64 Kbit	8 K	4.5 V	5.5 V	SRAM	0.3 in	28-CDIP	7.62 mm	Parallel	28-CDIP	Volatile	25 ns	125 °C	-55 °C
Renesas Electronics Corporation 7164S100DB	SRAM - Asynchronous			100 ns	100 ns	100 ns	Through Hole	64 Kbit	8 K	4.5 V	5.5 V	SRAM	0.6 in	28-CDIP	15.24 mm	Parallel	28-CDIP	Volatile		125 °C	-55 °C
Renesas Electronics Corporation 7164L25DB	SRAM - Asynchronous					25 ns	Through Hole	64 Kbit	8 K	4.5 V	5.5 V	SRAM	0.6 in	28-CDIP	15.24 mm	Parallel	28-CDIP	Volatile	25 ns	125 °C	-55 °C
Renesas Electronics Corporation 7164S20TPGI	SRAM - Asynchronous	85 °C	-40 °C			20 ns	Through Hole	64 Kbit	8 K	4.5 V	5.5 V	SRAM	0.3 in	28-DIP	7.62 mm	Parallel	28-PDIP	Volatile	20 ns
Renesas Electronics Corporation 7164L25YGI	SRAM - Asynchronous	85 °C	-40 °C			25 ns	Surface Mount	64 Kbit	8 K	4.5 V	5.5 V	SRAM	7.62 mm	28-BSOJ		Parallel	28-SOJ	Volatile	25 ns			0.3 in
Renesas Electronics Corporation 7164L15L32B	SRAM - Asynchronous					15 ns	Surface Mount	64 Kbit	8 K	4.5 V	5.5 V	SRAM		32-CLCC		Parallel	32-LCC (13.97x11.43)	Volatile	15 ns	125 °C	-55 °C
Renesas Electronics Corporation 7164S25TDB	SRAM - Asynchronous					25 ns	Through Hole	64 Kbit	8 K	4.5 V	5.5 V	SRAM	0.3 in	28-CDIP	7.62 mm	Parallel	28-CDIP	Volatile	25 ns	125 °C	-55 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

7164L Series

The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL-compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

Documents

Technical documentation and resources

Datasheet

IDT Suffixes

Datasheet

7164SL Data Sheet

Datasheet