7164L Series

5.0V 8K x 8 Asynchronous Static RAM

Manufacturer: Renesas Electronics Corporation

Catalog

5.0V 8K x 8 Asynchronous Static RAM

Part	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Access Time	Mounting Type	Memory Size	Memory Organization	Voltage - Supply [Min]	Voltage - Supply [Max]	Memory Format	Package / Case	Package / Case	Package / Case	Memory Interface	Supplier Device Package	Memory Type	Write Cycle Time - Word, Page	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case
Renesas Electronics Corporation 7164L45TPGI	SRAM - Asynchronous	85 °C	-40 °C	45 ns	45 ns	45 ns	Through Hole	64 Kbit	8 K	4.5 V	5.5 V	SRAM	0.3 in	28-DIP	7.62 mm	Parallel	28-PDIP	Volatile
Renesas Electronics Corporation 7164L20TPGI	SRAM - Asynchronous	85 °C	-40 °C			20 ns	Through Hole	64 Kbit	8 K	4.5 V	5.5 V	SRAM	0.3 in	28-DIP	7.62 mm	Parallel	28-PDIP	Volatile	20 ns
Renesas Electronics Corporation 7164S70DB	SRAM - Asynchronous					70 ns	Through Hole	64 Kbit	8 K	4.5 V	5.5 V	SRAM	0.6 in	28-CDIP	15.24 mm	Parallel	28-CDIP	Volatile		125 °C	-55 °C
Renesas Electronics Corporation 7164L25TDB	SRAM - Asynchronous					25 ns	Through Hole	64 Kbit	8 K	4.5 V	5.5 V	SRAM	0.3 in	28-CDIP	7.62 mm	Parallel	28-CDIP	Volatile	25 ns	125 °C	-55 °C
Renesas Electronics Corporation 7164S100DB	SRAM - Asynchronous			100 ns	100 ns	100 ns	Through Hole	64 Kbit	8 K	4.5 V	5.5 V	SRAM	0.6 in	28-CDIP	15.24 mm	Parallel	28-CDIP	Volatile		125 °C	-55 °C
Renesas Electronics Corporation 7164L25DB	SRAM - Asynchronous					25 ns	Through Hole	64 Kbit	8 K	4.5 V	5.5 V	SRAM	0.6 in	28-CDIP	15.24 mm	Parallel	28-CDIP	Volatile	25 ns	125 °C	-55 °C
Renesas Electronics Corporation 7164S20TPGI	SRAM - Asynchronous	85 °C	-40 °C			20 ns	Through Hole	64 Kbit	8 K	4.5 V	5.5 V	SRAM	0.3 in	28-DIP	7.62 mm	Parallel	28-PDIP	Volatile	20 ns
Renesas Electronics Corporation 7164L25YGI	SRAM - Asynchronous	85 °C	-40 °C			25 ns	Surface Mount	64 Kbit	8 K	4.5 V	5.5 V	SRAM	7.62 mm	28-BSOJ		Parallel	28-SOJ	Volatile	25 ns			0.3 in
Renesas Electronics Corporation 7164L15L32B	SRAM - Asynchronous					15 ns	Surface Mount	64 Kbit	8 K	4.5 V	5.5 V	SRAM		32-CLCC		Parallel	32-LCC (13.97x11.43)	Volatile	15 ns	125 °C	-55 °C
Renesas Electronics Corporation 7164S25TDB	SRAM - Asynchronous					25 ns	Through Hole	64 Kbit	8 K	4.5 V	5.5 V	SRAM	0.3 in	28-CDIP	7.62 mm	Parallel	28-CDIP	Volatile	25 ns	125 °C	-55 °C

Catalog

5.0V 8K x 8 Asynchronous Static RAM

Description

The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL-compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.