
IS61WV25616EDBLL-8TLI-TR
ActiveISSI, Integrated Silicon Solution Inc
SRAM CHIP ASYNC SINGLE 2.5V/3.3V 4M-BIT 256M X 16 8NS 44-PIN TSOP-II T/R
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IS61WV25616EDBLL-8TLI-TR
ActiveISSI, Integrated Silicon Solution Inc
SRAM CHIP ASYNC SINGLE 2.5V/3.3V 4M-BIT 256M X 16 8NS 44-PIN TSOP-II T/R
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IS61WV25616EDBLL-8TLI-TR |
|---|---|
| Access Time | 8 ns |
| Memory Format | SRAM |
| Memory Interface | Parallel |
| Memory Organization | 256 K |
| Memory Size | 512 kb |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 10.16 mm |
| Package / Case | 10.16 mm |
| Package / Case | 44-TSOP |
| Supplier Device Package | 44-TSOP II |
| Technology | SRAM - Asynchronous |
| Voltage - Supply [Max] | 3.6 V |
| Voltage - Supply [Min] | 3 V |
| Write Cycle Time - Word, Page | 8 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 1000 | $ 3.69 | |
Description
General part information
IS61WV25616 Series
High-speed access time: 8, 10 ns
Low Active Power: 85 mW (typical)
Low Standby Power: 7 mW (typical) CMOS standby
Documents
Technical documentation and resources
No documents available