
IS61WV25616EDBLL-8TLI
ActiveISSI, Integrated Silicon Solution Inc
4MB,HIGH-SPEED/LOW POWER,ASYNC WITH ECC,256K X 16,8NS,3.3V,44 PIN TSOP II, ROHS
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IS61WV25616EDBLL-8TLI
ActiveISSI, Integrated Silicon Solution Inc
4MB,HIGH-SPEED/LOW POWER,ASYNC WITH ECC,256K X 16,8NS,3.3V,44 PIN TSOP II, ROHS
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Technical Specifications
Parameters and characteristics for this part
| Specification | IS61WV25616EDBLL-8TLI |
|---|---|
| Access Time | 8 ns |
| Memory Format | SRAM |
| Memory Interface | Parallel |
| Memory Organization | 256 K |
| Memory Size | 512 kb |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 10.16 mm |
| Package / Case | 10.16 mm |
| Package / Case | 44-TSOP |
| Supplier Device Package | 44-TSOP II |
| Technology | SRAM - Asynchronous |
| Voltage - Supply [Max] | 3.6 V |
| Voltage - Supply [Min] | 3 V |
| Write Cycle Time - Word, Page | 8 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IS61WV25616 Series
SRAM - Asynchronous Memory IC 4Mbit Parallel 8 ns 44-TSOP II
Documents
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