
IS61WV25616EDALL-20BLI-TR
ActiveISSI, Integrated Silicon Solution Inc
IC SRAM 4MBIT PARALLEL 48TFBGA
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IS61WV25616EDALL-20BLI-TR
ActiveISSI, Integrated Silicon Solution Inc
IC SRAM 4MBIT PARALLEL 48TFBGA
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IS61WV25616EDALL-20BLI-TR |
|---|---|
| Access Time | 20 ns |
| Memory Format | SRAM |
| Memory Interface | Parallel |
| Memory Organization | 256 K |
| Memory Size | 512 kb |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 48-TFBGA |
| Supplier Device Package | 48-TFBGA (6x8) |
| Technology | SRAM - Asynchronous |
| Voltage - Supply [Max] | 2.2 V |
| Voltage - Supply [Min] | 1.65 V |
| Write Cycle Time - Word, Page | 20 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 2500 | $ 4.54 | |
Description
General part information
IS61WV25616 Series
SRAM - Asynchronous Memory IC 4Mbit Parallel 20 ns 48-TFBGA (6x8)
Documents
Technical documentation and resources
No documents available