SCS208AGHRC

Obsolete

Rohm Semiconductor

DIODE SIL CARB 650V 8A TO220AC

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Obsolete

Rohm Semiconductor

DIODE SIL CARB 650V 8A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	SCS208AGHRC

Capacitance @ Vr, F	291 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	160 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	TO-220-2
Qualification	AEC-Q101
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220AC
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V

650V, 8A, SMD, Silicon-carbide (SiC) SBD for Automotive

Part	Mounting Type	Package / Case	Technology	Supplier Device Package	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Speed	Grade	Qualification
Rohm Semiconductor SCS208AGC	Through Hole	TO-220-2	SiC (Silicon Carbide) Schottky	TO-220AC	291 pF	175 °C	650 V	160 µA	8 A	No Recovery Time
Rohm Semiconductor SCS208AJTLL	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	SiC (Silicon Carbide) Schottky		291 pF	175 °C	650 V	160 µA	8 A	No Recovery Time
Rohm Semiconductor SCS208AGHRC	Through Hole	TO-220-2	SiC (Silicon Carbide) Schottky	TO-220AC	291 pF	175 °C	650 V	160 µA	8 A	No Recovery Time	Automotive	AEC-Q101
Rohm Semiconductor SCS208AMC	Through Hole	TO-220-2 Full Pack	SiC (Silicon Carbide) Schottky	TO-220FM	291 pF	175 °C	650 V	160 µA	8 A	No Recovery Time
Rohm Semiconductor SCS208AJHRTLL	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	SiC (Silicon Carbide) Schottky		291 pF	175 °C	650 V	160 µA	8 A	No Recovery Time	Automotive	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$