SCS208AGC

Obsolete

Rohm Semiconductor

DIODE SIL CARB 650V 8A TO220AC

Search across all available documentation for this part.

Obsolete

Rohm Semiconductor

DIODE SIL CARB 650V 8A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	SCS208AGC

Capacitance @ Vr, F	291 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	160 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220AC
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V

650V, 8A, SMD, Silicon-carbide (SiC) SBD for Automotive

Part	Mounting Type	Package / Case	Technology	Supplier Device Package	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Speed	Grade	Qualification
Rohm Semiconductor SCS208AGC	Through Hole	TO-220-2	SiC (Silicon Carbide) Schottky	TO-220AC	291 pF	175 °C	650 V	160 µA	8 A	No Recovery Time
Rohm Semiconductor SCS208AJTLL	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	SiC (Silicon Carbide) Schottky		291 pF	175 °C	650 V	160 µA	8 A	No Recovery Time
Rohm Semiconductor SCS208AGHRC	Through Hole	TO-220-2	SiC (Silicon Carbide) Schottky	TO-220AC	291 pF	175 °C	650 V	160 µA	8 A	No Recovery Time	Automotive	AEC-Q101
Rohm Semiconductor SCS208AMC	Through Hole	TO-220-2 Full Pack	SiC (Silicon Carbide) Schottky	TO-220FM	291 pF	175 °C	650 V	160 µA	8 A	No Recovery Time
Rohm Semiconductor SCS208AJHRTLL	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	SiC (Silicon Carbide) Schottky		291 pF	175 °C	650 V	160 µA	8 A	No Recovery Time	Automotive	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$