71V67603S150BQG8

Obsolete

Renesas Electronics Corporation

3.3V 256K X 36 SYNCHRONOUS 3.3V I/O PIPELINED SRAM

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Documents71V67603/803 Datasheet Datasheet +1

71V67603S150BQG8

Obsolete

Renesas Electronics Corporation

3.3V 256K X 36 SYNCHRONOUS 3.3V I/O PIPELINED SRAM

Deep-Dive with AI

Documents71V67603/803 Datasheet Datasheet +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	71V67603S150BQG8

Access Time	3.8 ns
Clock Frequency	150 MHz
Memory Format	SRAM
Memory Interface	Parallel
Memory Organization [custom]	36
Memory Organization [custom]	256 K
Memory Size	9 Mbit
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	70 °C
Operating Temperature [Min]	0 °C
Package / Case	165-TBGA
Supplier Device Package	165-CABGA (13x15)
Technology	SRAM - Synchronous, SDR
Voltage - Supply [Max]	3.465 V
Voltage - Supply [Min]	3.135 V

71V67603 Series

3.3V 256K x 36 Synchronous 3.3V I/O PipeLined SRAM

Part	Memory Size	Technology	Clock Frequency	Memory Organization [custom]	Memory Organization [custom]	Supplier Device Package	Memory Format	Package / Case	Memory Interface	Voltage - Supply [Max]	Voltage - Supply [Min]	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Access Time	Memory Type
Renesas Electronics Corporation 71V67603S133BGGI8	9 Mbit	SRAM - Synchronous SDR	133 MHz	36	256 K	119-PBGA (14x22)	SRAM	119-BGA	Parallel	3.465 V	3.135 V	Surface Mount	85 °C	-40 °C	4.2 ns	Volatile
Renesas Electronics Corporation 71V67603S150BQG	9 Mbit	SRAM - Synchronous SDR	150 MHz	36	256 K	165-CABGA (13x15)	SRAM	165-TBGA	Parallel	3.465 V	3.135 V	Surface Mount	70 °C	0 °C	3.8 ns	Volatile
Renesas Electronics Corporation 71V67603S150BQG8	9 Mbit	SRAM - Synchronous SDR	150 MHz	36	256 K	165-CABGA (13x15)	SRAM	165-TBGA	Parallel	3.465 V	3.135 V	Surface Mount	70 °C	0 °C	3.8 ns	Volatile
Renesas Electronics Corporation 71V67603S133BGGI	9 Mbit	SRAM - Synchronous SDR	133 MHz	36	256 K	119-PBGA (14x22)	SRAM	119-BGA	Parallel	3.465 V	3.135 V	Surface Mount	85 °C	-40 °C	4.2 ns	Volatile
Renesas Electronics Corporation 71V67603S166PFGI8	9 Mbit	SRAM - Synchronous SDR	166 MHz	36	256 K	100-TQFP (14x14)	SRAM	100-LQFP	Parallel	3.465 V	3.135 V	Surface Mount	85 °C	-40 °C		Volatile
Renesas Electronics Corporation 71V67603S150PFG8	9 Mbit	SRAM - Synchronous SDR	150 MHz	36	256 K	100-TQFP (14x14)	SRAM	100-LQFP	Parallel	3.465 V	3.135 V	Surface Mount	70 °C	0 °C	3.8 ns	Volatile
Renesas Electronics Corporation 71V67603S133BQG8	9 Mbit	SRAM - Synchronous SDR	133 MHz	36	256 K	165-CABGA (13x15)	SRAM	165-TBGA	Parallel	3.465 V	3.135 V	Surface Mount	70 °C	0 °C	4.2 ns	Volatile
Renesas Electronics Corporation 71V67603S150PFGI	9 Mbit	SRAM - Synchronous SDR	150 MHz	36	256 K	100-TQFP (14x14)	SRAM	100-LQFP	Parallel	3.465 V	3.135 V	Surface Mount	85 °C	-40 °C	3.8 ns	Volatile
Renesas Electronics Corporation 71V67603S150PFGI8	9 Mbit	SRAM - Synchronous SDR	150 MHz	36	256 K	100-TQFP (14x14)	SRAM	100-LQFP	Parallel	3.465 V	3.135 V	Surface Mount	85 °C	-40 °C	3.8 ns	Volatile
Renesas Electronics Corporation 71V67603S133BQI	9 Mbit	SRAM - Synchronous SDR	133 MHz	36	256 K	165-CABGA (13x15)	SRAM	165-TBGA	Parallel	3.465 V	3.135 V	Surface Mount	85 °C	-40 °C	4.2 ns	Volatile

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

71V67603 Series

The 71V67603 3.3V CMOS SRAM is organized as 256K x 36. The 71V67603 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.The order of these three addresses are defined by the internal burst counter and the LBO input pin.

Documents

Technical documentation and resources

71V67603/803 Datasheet

Datasheet

IDT Suffixes

Datasheet