71V67603 Series

3.3V 256K x 36 Synchronous 3.3V I/O PipeLined SRAM

Manufacturer: Renesas Electronics Corporation

Catalog

3.3V 256K x 36 Synchronous 3.3V I/O PipeLined SRAM

Part	Memory Size	Technology	Clock Frequency	Memory Organization [custom]	Memory Organization [custom]	Supplier Device Package	Memory Format	Package / Case	Memory Interface	Voltage - Supply [Max]	Voltage - Supply [Min]	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Access Time	Memory Type
Renesas Electronics Corporation 71V67603S133BGGI8	9 Mbit	SRAM - Synchronous SDR	133 MHz	36	256 K	119-PBGA (14x22)	SRAM	119-BGA	Parallel	3.465 V	3.135 V	Surface Mount	85 °C	-40 °C	4.2 ns	Volatile
Renesas Electronics Corporation 71V67603S150BQG	9 Mbit	SRAM - Synchronous SDR	150 MHz	36	256 K	165-CABGA (13x15)	SRAM	165-TBGA	Parallel	3.465 V	3.135 V	Surface Mount	70 °C	0 °C	3.8 ns	Volatile
Renesas Electronics Corporation 71V67603S150BQG8	9 Mbit	SRAM - Synchronous SDR	150 MHz	36	256 K	165-CABGA (13x15)	SRAM	165-TBGA	Parallel	3.465 V	3.135 V	Surface Mount	70 °C	0 °C	3.8 ns	Volatile
Renesas Electronics Corporation 71V67603S133BGGI	9 Mbit	SRAM - Synchronous SDR	133 MHz	36	256 K	119-PBGA (14x22)	SRAM	119-BGA	Parallel	3.465 V	3.135 V	Surface Mount	85 °C	-40 °C	4.2 ns	Volatile
Renesas Electronics Corporation 71V67603S166PFGI8	9 Mbit	SRAM - Synchronous SDR	166 MHz	36	256 K	100-TQFP (14x14)	SRAM	100-LQFP	Parallel	3.465 V	3.135 V	Surface Mount	85 °C	-40 °C		Volatile
Renesas Electronics Corporation 71V67603S150PFG8	9 Mbit	SRAM - Synchronous SDR	150 MHz	36	256 K	100-TQFP (14x14)	SRAM	100-LQFP	Parallel	3.465 V	3.135 V	Surface Mount	70 °C	0 °C	3.8 ns	Volatile
Renesas Electronics Corporation 71V67603S133BQG8	9 Mbit	SRAM - Synchronous SDR	133 MHz	36	256 K	165-CABGA (13x15)	SRAM	165-TBGA	Parallel	3.465 V	3.135 V	Surface Mount	70 °C	0 °C	4.2 ns	Volatile
Renesas Electronics Corporation 71V67603S150PFGI	9 Mbit	SRAM - Synchronous SDR	150 MHz	36	256 K	100-TQFP (14x14)	SRAM	100-LQFP	Parallel	3.465 V	3.135 V	Surface Mount	85 °C	-40 °C	3.8 ns	Volatile
Renesas Electronics Corporation 71V67603S150PFGI8	9 Mbit	SRAM - Synchronous SDR	150 MHz	36	256 K	100-TQFP (14x14)	SRAM	100-LQFP	Parallel	3.465 V	3.135 V	Surface Mount	85 °C	-40 °C	3.8 ns	Volatile
Renesas Electronics Corporation 71V67603S133BQI	9 Mbit	SRAM - Synchronous SDR	133 MHz	36	256 K	165-CABGA (13x15)	SRAM	165-TBGA	Parallel	3.465 V	3.135 V	Surface Mount	85 °C	-40 °C	4.2 ns	Volatile

Catalog

3.3V 256K x 36 Synchronous 3.3V I/O PipeLined SRAM

Description

The 71V67603 3.3V CMOS SRAM is organized as 256K x 36. The 71V67603 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.The order of these three addresses are defined by the internal burst counter and the LBO input pin.