Technical Specifications
Parameters and characteristics for this part
| Specification | SCS110AGC |
|---|---|
| Capacitance @ Vr, F | 430 pF |
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage @ Vr | 200 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 °C |
| Package / Case | TO-220-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | TO-220AC |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
SCS110 Series
SCS110AGC series of SiC Schottky barrier diodes has a rated blocking voltage of 600V, is available in 10A, and offers industry-leading low forward voltage and fast recovery time. Compared to Si FRD diodes, all SiC diodes incur much lower switching loss. Compared to other SiC diodes, ROHM SiC SBDs feature lower VF and thus comparatively lower conduction loss
Documents
Technical documentation and resources