SCS110AMC

Obsolete

Rohm Semiconductor

DIODE SIL CARB 600V 10A TO220FM

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Obsolete

Rohm Semiconductor

DIODE SIL CARB 600V 10A TO220FM

Technical Specifications

Parameters and characteristics for this part

Specification	SCS110AMC

Capacitance @ Vr, F	430 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	200 µA
Mounting Type	Through Hole
Operating Temperature - Junction	150 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220FM
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Package / Case	Mounting Type	Speed	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Operating Temperature - Junction	Current - Reverse Leakage @ Vr	Supplier Device Package	Operating Temperature - Junction [Max]
Rohm Semiconductor SCS110AMC	430 pF	600 V	SiC (Silicon Carbide) Schottky	TO-220-2	Through Hole	No Recovery Time	10 A	1.7 V	0 ns	150 °C	200 µA	TO-220FM
Rohm Semiconductor SCS110AGC	430 pF	600 V	SiC (Silicon Carbide) Schottky	TO-220-2	Through Hole	No Recovery Time	10 A	1.7 V	0 ns		200 µA	TO-220AC	175 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 10A Through Hole TO-220FM

Technical documentation and resources