DIODE SIL CARB 600V 10A TO220FM
| Part | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) [Max] | Technology | Package / Case | Mounting Type | Speed | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Operating Temperature - Junction | Current - Reverse Leakage @ Vr | Supplier Device Package | Operating Temperature - Junction [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | 430 pF | 600 V | SiC (Silicon Carbide) Schottky | TO-220-2 | Through Hole | No Recovery Time | 10 A | 1.7 V | 0 ns | 150 °C | 200 µA | TO-220FM | |
Rohm Semiconductor | 430 pF | 600 V | SiC (Silicon Carbide) Schottky | TO-220-2 | Through Hole | No Recovery Time | 10 A | 1.7 V | 0 ns | 200 µA | TO-220AC | 175 °C |