MT53E1G32D2FW-046 WT:B

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Micron Technology Inc.

DRAM, MOBILE LPDDR4, 32 GBIT, 1G X 32BIT, 2.133 GHZ, TFBGA, 200 PINS

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MT53E1G32D2FW-046 WT:B

Active

Micron Technology Inc.

DRAM, MOBILE LPDDR4, 32 GBIT, 1G X 32BIT, 2.133 GHZ, TFBGA, 200 PINS

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MT53E1G32D2FW-046 WT:B

Clock Frequency	2.133 GHz
Memory Format	DRAM
Memory Interface	Parallel
Memory Organization	1 G
Memory Size	32 Gbit
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-25 °C
Package / Case	200-TFBGA
Supplier Device Package	200-TFBGA
Supplier Device Package [x]	10
Supplier Device Package [y]	14.5
Technology	SDRAM - Mobile LPDDR4
Voltage - Supply [Max]	1.17 V
Voltage - Supply [Min]	1.06 V
Write Cycle Time - Word, Page	18 ns

MT53E1G32 Series

Part	Technology	Memory Organization	Memory Interface	Clock Frequency	Grade	Mounting Type	Qualification	Write Cycle Time - Word, Page	Memory Type	Supplier Device Package [y]	Supplier Device Package [x]	Supplier Device Package	Memory Format	Voltage - Supply [Min]	Voltage - Supply [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Memory Size	Voltage - Supply
Micron Technology Inc. MT53E1G32D2FW-046 AAT:C TR	SDRAM - Mobile LPDDR4X	1 G	Parallel	2.133 GHz	Automotive	Surface Mount	AEC-Q100	18 ns	Volatile	14.5	10	200-TFBGA	DRAM	1.06 V	1.17 V	105 °C	-40 °C	200-TFBGA	32 Gbit
Micron Technology Inc. MT53E1G32D2FW-046 WT:A TR	SDRAM - Mobile LPDDR4X	1 G	Parallel	2.133 GHz		Surface Mount		18 ns	Volatile	14.5	10	200-TFBGA	DRAM	1.06 V	1.17 V	85 °C	-25 °C	200-TFBGA	32 Gbit
Micron Technology Inc. MT53E1G32D4NQ-046 WT:E TR	SDRAM - Mobile LPDDR4	1 G		2.133 GHz					Volatile				DRAM			85 °C	-30 °C		32 Gbit	1.1 V
Micron Technology Inc. MT53E1G32D2FW-046 AIT:A	SDRAM - Mobile LPDDR4X	1 G	Parallel	2.133 GHz	Automotive	Surface Mount	AEC-Q100	18 ns	Volatile	14.5	10	200-TFBGA	DRAM	1.06 V	1.17 V	95 °C	-40 °C	200-TFBGA	32 Gbit
Micron Technology Inc. MT53E1G32D2FW-046 AUT:A TR	SDRAM - Mobile LPDDR4X	1 G	Parallel	2.133 GHz	Automotive	Surface Mount	AEC-Q100	18 ns	Volatile	14.5	10	200-TFBGA	DRAM	1.06 V	1.17 V	125 °C	-40 °C	200-TFBGA	32 Gbit
Micron Technology Inc. MT53E1G32D2FW-046 AIT:B TR	SDRAM - Mobile LPDDR4X	1 G	Parallel	2.133 GHz	Automotive	Surface Mount	AEC-Q100	18 ns	Volatile	14.5	10	200-TFBGA	DRAM	1.06 V	1.17 V	95 °C	-40 °C	200-TFBGA	32 Gbit
Micron Technology Inc. MT53E1G32D2NP-053 RS WT:C	SDRAM - Mobile LPDDR4	1 G											DRAM						32 Gbit
Micron Technology Inc. MT53E1G32D2FW-046 AAT:A	SDRAM - Mobile LPDDR4X	1 G	Parallel	2.133 GHz	Automotive	Surface Mount	AEC-Q100	18 ns	Volatile	14.5	10	200-TFBGA	DRAM	1.06 V	1.17 V	105 °C	-40 °C	200-TFBGA	32 Gbit
Micron Technology Inc. MT53E1G32D2FW-046 IT:A TR	SDRAM - Mobile LPDDR4X	1 G	Parallel	2.133 GHz		Surface Mount		18 ns	Volatile	14.5	10	200-TFBGA	DRAM	1.06 V	1.17 V	95 °C	-40 °C	200-TFBGA	32 Gbit
Micron Technology Inc. MT53E1G32D2FW-046 WT:B	SDRAM - Mobile LPDDR4	1 G	Parallel	2.133 GHz		Surface Mount		18 ns	Volatile	14.5	10	200-TFBGA	DRAM	1.06 V	1.17 V	85 °C	-25 °C	200-TFBGA	32 Gbit

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tray	1	$ 31.19
		10	$ 27.69
		25	$ 26.40
		40	$ 25.77
		80	$ 24.85
		230	$ 23.52
Newark	Each	1	$ 30.85
		5	$ 29.69
		10	$ 28.54
		25	$ 27.62
		50	$ 27.16
		100	$ 26.48
		250	$ 25.47

Description

General part information

MT53E1G32 Series

MT53E1G32D2FW-046 WT:B is a LPDDR4X/LPDDR4 SDRAM. The 16Gb mobile low-power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed, CMOS dynamic random-access memory device. This device is internally configured with 2 channels or 1 channel ×16 I/O, each channel having 8-banks.

Documents

Technical documentation and resources