
MT53E1G32D2FW-046 AIT:B TR
ActiveMicron Technology Inc.
IC DRAM 32GBIT PAR 200TFBGA
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MT53E1G32D2FW-046 AIT:B TR
ActiveMicron Technology Inc.
IC DRAM 32GBIT PAR 200TFBGA
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | MT53E1G32D2FW-046 AIT:B TR |
|---|---|
| Clock Frequency | 2.133 GHz |
| Grade | Automotive |
| Memory Format | DRAM |
| Memory Interface | Parallel |
| Memory Organization | 1 G |
| Memory Size | 32 Gbit |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 95 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 200-TFBGA |
| Qualification | AEC-Q100 |
| Supplier Device Package | 200-TFBGA |
| Supplier Device Package [x] | 10 |
| Supplier Device Package [y] | 14.5 |
| Technology | SDRAM - Mobile LPDDR4X |
| Voltage - Supply [Max] | 1.17 V |
| Voltage - Supply [Min] | 1.06 V |
| Write Cycle Time - Word, Page | 18 ns |
MT53E1G32 Series
| Part | Technology | Memory Organization | Memory Interface | Clock Frequency | Grade | Mounting Type | Qualification | Write Cycle Time - Word, Page | Memory Type | Supplier Device Package [y] | Supplier Device Package [x] | Supplier Device Package | Memory Format | Voltage - Supply [Min] | Voltage - Supply [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Memory Size | Voltage - Supply |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Micron Technology Inc. | SDRAM - Mobile LPDDR4X | 1 G | Parallel | 2.133 GHz | Automotive | Surface Mount | AEC-Q100 | 18 ns | Volatile | 14.5 | 10 | 200-TFBGA | DRAM | 1.06 V | 1.17 V | 105 °C | -40 °C | 200-TFBGA | 32 Gbit | |
Micron Technology Inc. | SDRAM - Mobile LPDDR4X | 1 G | Parallel | 2.133 GHz | Surface Mount | 18 ns | Volatile | 14.5 | 10 | 200-TFBGA | DRAM | 1.06 V | 1.17 V | 85 °C | -25 °C | 200-TFBGA | 32 Gbit | |||
Micron Technology Inc. | SDRAM - Mobile LPDDR4 | 1 G | 2.133 GHz | Volatile | DRAM | 85 °C | -30 °C | 32 Gbit | 1.1 V | |||||||||||
Micron Technology Inc. | SDRAM - Mobile LPDDR4X | 1 G | Parallel | 2.133 GHz | Automotive | Surface Mount | AEC-Q100 | 18 ns | Volatile | 14.5 | 10 | 200-TFBGA | DRAM | 1.06 V | 1.17 V | 95 °C | -40 °C | 200-TFBGA | 32 Gbit | |
Micron Technology Inc. | SDRAM - Mobile LPDDR4X | 1 G | Parallel | 2.133 GHz | Automotive | Surface Mount | AEC-Q100 | 18 ns | Volatile | 14.5 | 10 | 200-TFBGA | DRAM | 1.06 V | 1.17 V | 125 °C | -40 °C | 200-TFBGA | 32 Gbit | |
Micron Technology Inc. | SDRAM - Mobile LPDDR4X | 1 G | Parallel | 2.133 GHz | Automotive | Surface Mount | AEC-Q100 | 18 ns | Volatile | 14.5 | 10 | 200-TFBGA | DRAM | 1.06 V | 1.17 V | 95 °C | -40 °C | 200-TFBGA | 32 Gbit | |
Micron Technology Inc. | SDRAM - Mobile LPDDR4 | 1 G | DRAM | 32 Gbit | ||||||||||||||||
Micron Technology Inc. | SDRAM - Mobile LPDDR4X | 1 G | Parallel | 2.133 GHz | Automotive | Surface Mount | AEC-Q100 | 18 ns | Volatile | 14.5 | 10 | 200-TFBGA | DRAM | 1.06 V | 1.17 V | 105 °C | -40 °C | 200-TFBGA | 32 Gbit | |
Micron Technology Inc. | SDRAM - Mobile LPDDR4X | 1 G | Parallel | 2.133 GHz | Surface Mount | 18 ns | Volatile | 14.5 | 10 | 200-TFBGA | DRAM | 1.06 V | 1.17 V | 95 °C | -40 °C | 200-TFBGA | 32 Gbit | |||
Micron Technology Inc. | SDRAM - Mobile LPDDR4 | 1 G | Parallel | 2.133 GHz | Surface Mount | 18 ns | Volatile | 14.5 | 10 | 200-TFBGA | DRAM | 1.06 V | 1.17 V | 85 °C | -25 °C | 200-TFBGA | 32 Gbit |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 2000 | $ 28.30 | |
Description
General part information
MT53E1G32 Series
SDRAM - Mobile LPDDR4X Memory IC 32Gbit Parallel 2.133 GHz 3.5 ns 200-TFBGA (10x14.5)
Documents
Technical documentation and resources
No documents available