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MT53E1G32D2FW-046 AIT:B TR - 200 TFBGA FW

MT53E1G32D2FW-046 AIT:B TR

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Micron Technology Inc.

IC DRAM 32GBIT PAR 200TFBGA

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MT53E1G32D2FW-046 AIT:B TR - 200 TFBGA FW

MT53E1G32D2FW-046 AIT:B TR

Active
Micron Technology Inc.

IC DRAM 32GBIT PAR 200TFBGA

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMT53E1G32D2FW-046 AIT:B TR
Clock Frequency2.133 GHz
GradeAutomotive
Memory FormatDRAM
Memory InterfaceParallel
Memory Organization1 G
Memory Size32 Gbit
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]95 °C
Operating Temperature [Min]-40 °C
Package / Case200-TFBGA
QualificationAEC-Q100
Supplier Device Package200-TFBGA
Supplier Device Package [x]10
Supplier Device Package [y]14.5
TechnologySDRAM - Mobile LPDDR4X
Voltage - Supply [Max]1.17 V
Voltage - Supply [Min]1.06 V
Write Cycle Time - Word, Page18 ns

MT53E1G32 Series

PartTechnologyMemory OrganizationMemory InterfaceClock FrequencyGradeMounting TypeQualificationWrite Cycle Time - Word, PageMemory TypeSupplier Device Package [y]Supplier Device Package [x]Supplier Device PackageMemory FormatVoltage - Supply [Min]Voltage - Supply [Max]Operating Temperature [Max]Operating Temperature [Min]Package / CaseMemory SizeVoltage - Supply
Micron Technology Inc.
SDRAM - Mobile LPDDR4X
1 G
Parallel
2.133 GHz
Automotive
Surface Mount
AEC-Q100
18 ns
Volatile
14.5
10
200-TFBGA
DRAM
1.06 V
1.17 V
105 °C
-40 °C
200-TFBGA
32 Gbit
Micron Technology Inc.
SDRAM - Mobile LPDDR4X
1 G
Parallel
2.133 GHz
Surface Mount
18 ns
Volatile
14.5
10
200-TFBGA
DRAM
1.06 V
1.17 V
85 °C
-25 °C
200-TFBGA
32 Gbit
Micron Technology Inc.
SDRAM - Mobile LPDDR4
1 G
2.133 GHz
Volatile
DRAM
85 °C
-30 °C
32 Gbit
1.1 V
Micron Technology Inc.
SDRAM - Mobile LPDDR4X
1 G
Parallel
2.133 GHz
Automotive
Surface Mount
AEC-Q100
18 ns
Volatile
14.5
10
200-TFBGA
DRAM
1.06 V
1.17 V
95 °C
-40 °C
200-TFBGA
32 Gbit
Micron Technology Inc.
SDRAM - Mobile LPDDR4X
1 G
Parallel
2.133 GHz
Automotive
Surface Mount
AEC-Q100
18 ns
Volatile
14.5
10
200-TFBGA
DRAM
1.06 V
1.17 V
125 °C
-40 °C
200-TFBGA
32 Gbit
Micron Technology Inc.
SDRAM - Mobile LPDDR4X
1 G
Parallel
2.133 GHz
Automotive
Surface Mount
AEC-Q100
18 ns
Volatile
14.5
10
200-TFBGA
DRAM
1.06 V
1.17 V
95 °C
-40 °C
200-TFBGA
32 Gbit
Micron Technology Inc.
SDRAM - Mobile LPDDR4
1 G
DRAM
32 Gbit
Micron Technology Inc.
SDRAM - Mobile LPDDR4X
1 G
Parallel
2.133 GHz
Automotive
Surface Mount
AEC-Q100
18 ns
Volatile
14.5
10
200-TFBGA
DRAM
1.06 V
1.17 V
105 °C
-40 °C
200-TFBGA
32 Gbit
Micron Technology Inc.
SDRAM - Mobile LPDDR4X
1 G
Parallel
2.133 GHz
Surface Mount
18 ns
Volatile
14.5
10
200-TFBGA
DRAM
1.06 V
1.17 V
95 °C
-40 °C
200-TFBGA
32 Gbit
Micron Technology Inc.
SDRAM - Mobile LPDDR4
1 G
Parallel
2.133 GHz
Surface Mount
18 ns
Volatile
14.5
10
200-TFBGA
DRAM
1.06 V
1.17 V
85 °C
-25 °C
200-TFBGA
32 Gbit

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 2000$ 28.30

Description

General part information

MT53E1G32 Series

SDRAM - Mobile LPDDR4X Memory IC 32Gbit Parallel 2.133 GHz 3.5 ns 200-TFBGA (10x14.5)

Documents

Technical documentation and resources

No documents available