IC DRAM 32GBIT PAR 200TFBGA
| Part | Technology | Memory Organization | Memory Interface | Clock Frequency | Grade | Mounting Type | Qualification | Write Cycle Time - Word, Page | Memory Type | Supplier Device Package [y] | Supplier Device Package [x] | Supplier Device Package | Memory Format | Voltage - Supply [Min] | Voltage - Supply [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Memory Size | Voltage - Supply |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Micron Technology Inc. | SDRAM - Mobile LPDDR4X | 1 G | Parallel | 2.133 GHz | Automotive | Surface Mount | AEC-Q100 | 18 ns | Volatile | 14.5 | 10 | 200-TFBGA | DRAM | 1.06 V | 1.17 V | 105 °C | -40 °C | 200-TFBGA | 32 Gbit | |
Micron Technology Inc. | SDRAM - Mobile LPDDR4X | 1 G | Parallel | 2.133 GHz | Surface Mount | 18 ns | Volatile | 14.5 | 10 | 200-TFBGA | DRAM | 1.06 V | 1.17 V | 85 °C | -25 °C | 200-TFBGA | 32 Gbit | |||
Micron Technology Inc. | SDRAM - Mobile LPDDR4 | 1 G | 2.133 GHz | Volatile | DRAM | 85 °C | -30 °C | 32 Gbit | 1.1 V | |||||||||||
Micron Technology Inc. | SDRAM - Mobile LPDDR4X | 1 G | Parallel | 2.133 GHz | Automotive | Surface Mount | AEC-Q100 | 18 ns | Volatile | 14.5 | 10 | 200-TFBGA | DRAM | 1.06 V | 1.17 V | 95 °C | -40 °C | 200-TFBGA | 32 Gbit | |
Micron Technology Inc. | SDRAM - Mobile LPDDR4X | 1 G | Parallel | 2.133 GHz | Automotive | Surface Mount | AEC-Q100 | 18 ns | Volatile | 14.5 | 10 | 200-TFBGA | DRAM | 1.06 V | 1.17 V | 125 °C | -40 °C | 200-TFBGA | 32 Gbit | |
Micron Technology Inc. | SDRAM - Mobile LPDDR4X | 1 G | Parallel | 2.133 GHz | Automotive | Surface Mount | AEC-Q100 | 18 ns | Volatile | 14.5 | 10 | 200-TFBGA | DRAM | 1.06 V | 1.17 V | 95 °C | -40 °C | 200-TFBGA | 32 Gbit | |
Micron Technology Inc. | SDRAM - Mobile LPDDR4 | 1 G | DRAM | 32 Gbit | ||||||||||||||||
Micron Technology Inc. | SDRAM - Mobile LPDDR4X | 1 G | Parallel | 2.133 GHz | Automotive | Surface Mount | AEC-Q100 | 18 ns | Volatile | 14.5 | 10 | 200-TFBGA | DRAM | 1.06 V | 1.17 V | 105 °C | -40 °C | 200-TFBGA | 32 Gbit | |
Micron Technology Inc. | SDRAM - Mobile LPDDR4X | 1 G | Parallel | 2.133 GHz | Surface Mount | 18 ns | Volatile | 14.5 | 10 | 200-TFBGA | DRAM | 1.06 V | 1.17 V | 95 °C | -40 °C | 200-TFBGA | 32 Gbit | |||
Micron Technology Inc. | SDRAM - Mobile LPDDR4 | 1 G | Parallel | 2.133 GHz | Surface Mount | 18 ns | Volatile | 14.5 | 10 | 200-TFBGA | DRAM | 1.06 V | 1.17 V | 85 °C | -25 °C | 200-TFBGA | 32 Gbit |