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71V124SA10PHGI - IDT10.16 Series

71V124SA10PHGI

Obsolete
Renesas Electronics Corporation

3.3V 128K X 8 ASYNCHRONOUS STATIC RAM CENTER POWER & GROUND PINOUT

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71V124SA10PHGI - IDT10.16 Series

71V124SA10PHGI

Obsolete
Renesas Electronics Corporation

3.3V 128K X 8 ASYNCHRONOUS STATIC RAM CENTER POWER & GROUND PINOUT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification71V124SA10PHGI
Access Time10 ns
Memory FormatSRAM
Memory InterfaceParallel
Memory Organization128K x 8
Memory Size1 Mbit
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case32-SOIC
Package / Case [x]0.4 in
Package / Case [y]10.16 mm
Supplier Device Package32-TSOP II
TechnologySRAM - Asynchronous
Voltage - Supply [Max]3.6 V
Voltage - Supply [Min]3.15 V
Write Cycle Time - Word, Page10 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

71V124 Series

The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

Documents

Technical documentation and resources